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符合RoHS标准
无铅

2EDN1153DAA

新品
12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications

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2EDN1153DAA
2EDN1153DAA

商品详情

  • Channels/Outputs
    2
  • 关断传播延迟
    3000 ns
  • 分类
    ISO 26262-compliant
  • 封装
    PG-TSDSO-32
  • 开通传播延迟
    1500 ns
  • 电压等级
    40 V
  • 电流检测放大器
    2xCSA
  • 目前计划的可用性至少到
    2039
  • 认证标准
    Automotive
  • 输入Vcc min
    3.1 V
  • 输入Vcc max
    40 V
  • 输出电流 (Source)
    0.3 A
  • 输出电流 (Sink)
    1.1 A
  • 配置
    High-side
  • 隔离类型
    Non-isolated
OPN
2EDN1153DAAXUMA1
产品状态 coming soon
英飞凌封装名称
封装名 N/A
包装尺寸 3000
包装类型 TAPE & REEL
湿度 2a
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称
封装名 -
包装尺寸 3000
包装类型 TAPE & REEL
湿度 2a
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
EiceDRIVER™ APD 2EDN1153DAA is an ISO 26262 compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern vehicles.

特性

  • PRO-SIL™ ISO 26262-compliant
  • Wide supply voltage range 3.1 - 40 V
  • Wire protection I²t and load protection
  • 2 independent SPI-controlled outputs
  • Drive multiple MOSFETs in parallel
  • Low power idle mode
  • Advanced diagnostics incl. watchdog
  • Storage configuration in NVM
  • MOSFET monitoring and safe avail. mode
  • Enhanced gate driving capability
  • Current dependent undervoltage lockout
  • TSDSO-32 package

    产品优势

    • Supporting various 12 V applications
    • For flexible configuration
    • High current capability
    • Minimizes current consumption in key-off
    • Safe, fast and efficient operation
    • Supporting ASIL B (D)
    • Fail operational power supply
    • Can act as connection/isolation switch
    • Dependable power supply and distribution

      应用

      文档

      设计资源

      开发者社区

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