现货，推荐
符合RoHS标准

IAUCN04S7N006T

40 V, N-Ch, 0.64mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 7
数据手册
封装

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IAUCN04S7N006T
IAUCN04S7N006T
数据手册

商品详情

  • Country of Assembly (Last BE site, current, subject to change)
    Malaysia
  • Country of Diffusion (Last FE site, current, subject to change)
    Austria, Germany
  • ID (@25°C) max
    175 A
  • QG (typ @10V)
    112 nC
  • RDS (on) (@10V) max
    0.64 mΩ
  • VDS max
    40 V
  • VGS(th)
    2.6 V
  • 封装
    PG-LHDSO-10
  • 工作温度
    -55 °C to 175 °C
  • 技术
    OptiMOS™7
  • 推出年份
    2025
  • 极性
    N
  • 目前计划的可用性至少到
    2038
  • 认证标准
    Automotive
推荐的
OPN
IAUCN04S7N006TATMA1
产品状态 active and preferred
英飞凌封装名称
PG-LHDSO-10
封装名 SSO10T
包装尺寸 2000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-LHDSO-10
封装名 SSO10T
包装尺寸 2000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
IAUCN04S7N006T is an automotive MOSFET built with Infineon's leading-edge, power semiconductor technology, OptiMOS™ 7 40V. Offered in our innovative, top-side cooled SSO10T 5x7 mm² SMD package, it significantly advances cooling, power density and system costs. It is designed for the high performance, quality and robustness required for automotive applications. The package is JEDEC listed, suitable for open market use and with second sources.

特性

  • Direct cooling to ECU housing
  • Improves Zth by up to -50%
  • Improves Rth by up to -50%
  • Offers double sided PCB design
  • Increases application currents
  • JEDEC listed package

产品优势

  • Best Cooling Performance
  • Not heat transfer into PCB
  • Very compact PCB design
  • Reduces system area
  • Reduces cooling efforts & costs
  • Less system design costs
  • High power density & efficiency

应用

文档

文档

设计资源

合作伙伴解决方案

开发者社区

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