新品
现货，推荐
符合RoHS标准

IPP175N20NM6

新品
OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package
数据手册
封装

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IPP175N20NM6
IPP175N20NM6
数据手册

商品详情

  • ID max
    61 A
  • ID (@25°C) max
    61 A
  • IDpuls max
    244 A
  • QG (typ @10V)
    31 nC
  • QG
    31 nC
  • RDS (on) (@10V) max
    17.5 mΩ
  • RDS (on) max
    17.5 mΩ
  • VDS max
    200 V
  • VGS(th)
    3.7 V
  • Package
    TO-220
  • Operating Temperature
    -55 °C to 175 °C
  • Polarity
    N
受到推崇的
OPN
IPP175N20NM6AKSA1
产品状态 active and preferred
英飞凌封装名称
PG-TO220-3
封装名 TO220
包装尺寸 500
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TO220-3
封装名 TO220
包装尺寸 500
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
IPP175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFETTM products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a variety of applications: from static swiching to high frequency in hard and soft switching applications.

特性

  1. Industries lowest RDS(on) in 200 V
  2. Industries lowest Qrr in 200 V
  3. Up to 42 % lower RDS(on) vs previous gen
  4. Up to 89% lower Qrr(typ) vs previous gen
  5. 36% lower FOMg vs previous gen
  6. >3 times softer diode vs previous gen
  7. Improved capacitance linearity
  8. Improved SOA vs previous gen
  9. Tight Vgs(th) spread of +/-750 mV
  10. High avalanche ruggedness
  11. Max Tj of 175°C and MSL1

产品优势

  1. Low Conduction and Switching Losses
  2. Stable operation with improved EMI
  3. Better current sharing when paralleling
  4. Enhanced robustness
  5. Improved system reliability

文档

文档

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