IGC016K10S2
即将推出
即将推出
符合RoHS标准
无铅

IGC016K10S2

CoolGaN™ Transistor 100 V G5 in PQFN 3x5, 1.3 mΩ | with integrated Schottky diode
封装

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IGC016K10S2
IGC016K10S2


商品详情

  • 最高 ID (@25°C)
    108 A
  • 最高 IDpuls (@25°C)
    510 A
  • QG
    16 nC
  • RDS (on) (typ)
    1.3 mΩ
  • 最高 VDS
    100 V
  • 封装
    PQFN 3x5
  • 质量等级
    Industrial

OPN
IGC016K10S2XTMA1
产品状态 coming soon
英飞凌封装名称
PG-TSON-6
封装名 Gen
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态 coming soon
英飞凌封装名称
PG-TSON-6
封装名 Gen
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
The IGC016K10S2 is a 100 V normally-off e-mode GaN power transistor in a small 3 x 5 mm package with integrated Schottky diode. With this integrated feature, reverse conduction losses are minimized and even higher system efficiencies can be reached.

特性

  • 100 V e-mode power transistor
  • Monolithically integrated Schottky diode
  • Top-side cooled 3x5 mm package
  • High power capability
  • No reverse recovery charge
  • Ultra-low gate and output charge
  • Qualfied according to JEDEC
  • Ultrafast switching
  • Low reverse conduction voltage
  • Exposed die for thermal excellene
  • Moisture rating MSL1

产品优势

  • Space saving and highly robust package
  • Reduces overall component count
  • Increased ease-of-use circuit design
  • Lower BoM cost
  • Excellent reliability
  • Highest efficiency
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