IQE018N06NM6
现货，推荐
符合RoHS标准

IQE018N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance.
数据手册
封装

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IQE018N06NM6
IQE018N06NM6
数据手册


商品详情

  • 最高 ID (@25°C)
    178 A
  • QG (typ @10V)
    43 nC
  • 最高 RDS (on) (@10V)
    1.8 mΩ
  • 最高 VDS
    60 V
  • VGS(th) 范围
    2.1 V 至 3.3 V
  • VGS(th)
    2.7 V
  • 封装
    PQFN 3.3x3.3 Source-Down
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N

推荐的
OPN
IQE018N06NM6ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TSON-8
封装名 N/A
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
CN,MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-TSON-8
封装名 -
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
CN,MY
晶圆产地
AT
Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

特性

  • High performance silicon technology
  • Soft-switching optimized
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
  • Source-down package variants
  • Standard-gate footprint

产品优势

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved performance efficiency
  • Superior power handling capability
  • Robust reliable performance
  • Reduced package parasitics
  • Standard-Gate for easy layout fit-in
  • /ul>
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