1EDR3140HQE
新品
现货，推荐
符合RoHS标准
无铅

1EDR3140HQE

新品
5.7 kV (rms) single-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 8.5 V UVLO
数据手册
封装

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1EDR3140HQE
1EDR3140HQE
数据手册

  • VBS UVLO 范围
    8.55 V 至 9.3 V
  • 关断传播延迟
    40 ns
  • 封装
    PG-LDSO-8-1
  • 开通传播延迟
    40 ns
  • 拓扑结构
    High-side
  • 电压等级
    2300 V
  • 质量等级
    AEC-Q100
  • 输出电压 范围
    9.6 V 至 32 V
  • 输出电流 范围
    6 A 至 6.5 A
  • 通道
    1
  • 隔离类型
    Galvanic Isolation - Reinforced

推荐的
OPN
1EDR3140HQEXUMA1
产品状态 active and preferred
英飞凌封装名称
PG-LDSO-8
封装名 N/A
封装尺寸 1500
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
ID
晶圆产地
DE

产品状态
Active
英飞凌封装名称
PG-LDSO-8
封装名 -
封装尺寸 1500
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
ID
晶圆产地
DE
EiceDRIVER™ Compact 2300 V single-channel isolated gate driver with +/-6.5 A typical peak output current in an 8-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers Separate Outputs, enabling separate turn-on and turn-off gate resistors without the need for a bypass Schottky diode.

特性

  • For up to 2300 V Switches
  • 2300 V input-output functional isolation
  • Galvanically isolated coreless xformer
  • 35 V abs. max. output supply voltage
  • Up to 17 V input supply voltage
  • 34 ns typ propogation delay
  • 8.5 V / 9.3 V UVLO protection
  • CTI 600 Package with 8 mm creepage
  • Separate Outputs simplify output BOM
  • Product validation according to AEC-Q100

产品优势

  • PMOS Output for Reduced Switching Losses
  • Strong 6.5 A output stage
  • Best-in-class CMTI of > 300 kV/µs
  • 8 mm input-to-output
  • Max. 8 ns Part-to-part prop delay skew+
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 5.7 kV (rms) for 1 min
  • UVLO options for GaN, Si, IGBT, SiC
  • Pin-to-pin package option
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