现货，推荐
符合RoHS标准
无铅

6ED2231S12C

1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection
数据手册

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6ED2231S12C
6ED2231S12C
数据手册

商品详情

  • VBS UVLO (On)
    12.2 V
  • VBS UVLO (Off)
    11.3 V
  • 关断传播延迟
    650 ns
  • 开通传播延迟
    700 ns
  • 电压等级
    1200 V
  • 认证标准
    Industrial
  • 输入Vcc
    10 V to 20 V
  • 输出电流 (Source)
    0.35 A
  • 输出电流 (Sink)
    0.65 A
  • 通道数
    6
  • 隔离类型
    Functional levelshift SOI (Silicon On Insulator)
推荐的
OPN
6ED2231S12CX7SA1
产品状态 active and preferred
英飞凌封装名称 --
封装名 N/A
包装尺寸 1
包装类型 HORIZONTAL FRAME SHIPPER
湿度 N/A
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
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产品状态
Active
英飞凌封装名称 --
封装名 -
包装尺寸 1
包装类型 HORIZONTAL FRAME SHIPPER
湿度 -
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2231S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample wafer purchase.

特性

  • 1200-V Thin-Film-SOI technology
  • Integrated Ultra-fast Bootstrap Diode
  • Tolerant to -Vs 100V transient spike
  • Source/sink current 0.35 A/0.65 A
  • Over current protection (+/- 5%)
  • Integrated dead-time protection
  • Shoot-through protection
  • Independent UVLO for VCC and VBS
  • Fault and Enable on the same pin
  • Channels propagation delay matched
  • 3.3 V, 5 V, 15 V input logic

产品优势

  • Integrated BS diode for cost savings
  • 100 V -VS for increased reliability
  • 50% less on level shift power loss
  • Integrated protection for cost saving
  • UVLO protection at low supply voltage

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