CY62126EV30LL-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62126EV30LL-45BVXIT

数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62126EV30LL-45BVXIT
CY62126EV30LL-45BVXIT
数据手册


商品详情

  • 密度
    1 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    64K x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62126EV30LL-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
US
CY62126EV30LL-45BVXIT is a 1-Mbit (64 K × 16) CMOS SRAM with 45 ns access for 3 V systems (2.2 V to 3.6 V). It supports byte writes via BLE/BHE and tri-states I/Os when deselected (CE HIGH) or outputs are disabled (OE HIGH). Automatic CE power-down reduces current; standby is 1 µA typical (4 µA max) and ICC is 1.3 mA typical at 1 MHz. –40°C to +85°C, Pb-free 48-ball VFBGA package.

特性

  • 1-Mbit SRAM organized as 64K × 16
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • 1.3 mA typ active at 1 MHz
  • 4 µA max standby current
  • Auto power-down when addr static
  • Data retention at VCC down to 1.5 V
  • 3 µA max data-retention current
  • Byte write via BLE/BHE controls
  • Tri-state I/O via CE/OE/BHE/BLE

产品优势

  • 16-bit bus cuts MCU accesses
  • 45 ns suits fast SRAM interfaces
  • 2.2–3.6 V fits 3 V systems
  • Low active current extends runtime
  • µA standby minimizes sleep drain
  • Auto power-down saves idle power
  • 1.5 V retain data in deep sleep
  • Low ICCDR reduces backup load
  • Byte writes reduce write energy
  • Tri-state eases bus sharing/expand
文档

设计资源

合作伙伴解决方案

开发者社区