CY62167ELL-45ZXIT
现货，推荐
符合RoHS标准
无铅

CY62167ELL-45ZXIT

数据手册
封装

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CY62167ELL-45ZXIT
CY62167ELL-45ZXIT
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    4.5 V 至 5.5 V
  • 引线球表面
    Ni/Pd/Au
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62167ELL-45ZXIT
产品状态 active and preferred
英飞凌封装名称
PG-TSOP-48
封装名 TSOP-I-48 (51-85183)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
CN,US

产品状态
Active
英飞凌封装名称
PG-TSOP-48
封装名 TSOP-I-48 (51-85183)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
CN,US
CY62167ELL-45ZXI is a 16-Mbit CMOS SRAM configurable as 1 M × 16 or 2 M × 8, with 45 ns access for processor interfaces with TTL input levels. It operates from 4.5 V to 5.5 V over –40°C to +85°C and uses CE1/CE2, OE, and BLE/BHE controls for memory expansion and byte writes. Automatic power-down reduces standby to 1.5 µA typ (12 µA max); active current is 2.2 mA typ at 1 MHz and 25 mA typ at fMAX.

特性

  • 16-Mbit SRAM, 1 M×16 or 2 M×8
  • 45 ns read/write cycle time
  • 4.5 V to 5.5 V VCC operation
  • 2.2 mA typ at 1 MHz active
  • 1.5 µA typ standby power-down
  • 12 µA max standby current
  • TTL input levels supported
  • CE1/CE2/OE chip control inputs
  • BLE/BHE byte write enables
  • High-Z outputs on disable
  • >2001 V ESD (MIL-STD-883)
  • Latch-up current >200 mA

产品优势

  • Flexible 16-bit or 8-bit bus design
  • 45 ns access boosts CPU throughput
  • 5 V supply fits legacy designs
  • Low active current cuts power draw
  • µA standby extends battery life
  • Low max standby eases power budget
  • Direct TTL interfacing reduces glue
  • CE/OE simplify memory expansion
  • Byte writes reduce write bandwidth
  • High-Z avoids bus contention
  • High ESD cuts handling failures
  • Latch-up immunity improves uptime

应用

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