CY62168EV30LL-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62168EV30LL-45BVXIT

数据手册
封装

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CY62168EV30LL-45BVXIT
CY62168EV30LL-45BVXIT
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    2M x 8
  • 质量等级
    Industrial

推荐的
OPN
CY62168EV30LL-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US
CY62168EV30LL-45BVXIT is a 16-Mbit (2M × 8) CMOS static RAM for portable, battery-powered systems. It operates from 2.2 V to 3.6 V over -40°C to 85°C and supports 45 ns access. Low-power operation includes 7 mA typical active current at 1 MHz and 1.5 µA typical standby (12 µA max) with automatic power-down when deselected and high-impedance I/Os. It is offered in a Pb-free 48-ball VFBGA (BV) package.

特性

  • 16-Mbit SRAM, 2M × 8
  • 45 ns read/write cycle time
  • Address to data valid 45 ns
  • OE to data valid 22 ns
  • Single supply 2.2 V to 3.6 V
  • Active current 7 mA at 1 MHz typ
  • Standby 1.5 µA typ, 12 µA max
  • Data retention at VCC down to 1.5 V
  • Retention current 10 µA max
  • CE1/CE2 chip enables, OE, WE
  • Tri-state I/O on deselect or OE
  • Input/output capacitance 10 pF max

产品优势

  • Stores 2 MB for code or buffers
  • 45 ns cuts memory access latency
  • 45 ns tAA supports fast CPUs
  • 22 ns OE speeds random reads
  • 2.2–3.6 V fits common 3 V rails
  • 7 mA at 1 MHz lowers energy use
  • µA standby extends battery life
  • 1.5 V retention keeps data on droop
  • 10 µA retention eases backup power
  • CE/OE/WE simplifies bus control
  • Tri-state enables bus sharing
  • Low capacitance eases SI margins

应用

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