新品
现货，推荐
符合RoHS标准

FF2000R17T2P8

新品
1700 V, 2000 A half-bridge IGBT module
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FF2000R17T2P8
FF2000R17T2P8
数据手册

商品详情

推荐的
OPN
FF2000R17T2P8BPSA1
产品状态 active and preferred
英飞凌封装名称 AG-XHP2K17
封装名 N/A
包装尺寸 1
包装类型 TRAY
湿度 NA
防潮包装 NON DRY
无铅 No
无卤素 No
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称 AG-XHP2K17
封装名 -
包装尺寸 1
包装类型 TRAY
湿度 NA
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
XHP™ 2 1700 V, 2000 A half-bridge IGBT module with improved chipset IGBT8 and EC8, high power density and improved thermal management for more efficiency.

特性

  • Symmetrical module design
  • Low-inductive housing
  • Cu baseplate
  • Low gate charge QG of IGBT 8 for improved paralleling
  • Elevated softness of EmCon 8 for clean switching
  • High performance ceramic for improved thermal cycling and highest performance
  • Continuous operating temperatures @ Tvj = 175 °C

产品优势

  • High power density
  • Energy efficiency
  • Improved thermal performance
  • Low switching and conduction losses

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