IG1C052N10RCDV
现货，推荐
符合RoHS标准

IG1C052N10RCDV

Rad hard, 100 V, 52 A, GaN transistor bare die
数据手册

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IG1C052N10RCDV
IG1C052N10RCDV
数据手册

商品详情

  • ESD等级
    Class 1C
  • 最高 ID (@25°C)
    52 A
  • QG
    13 nC
  • 最高 RDS (on) (@25°C)
    6 mΩ
  • 最高 TID
    500 Krad(Si)
  • VBRDSS
    100 V
  • 最高 VF
    3.9 V
  • 产品组
    Rad hard GaN FETs
  • 可选TID等级 (kRad(si))
    500
  • 封装
    Die
  • 极性
    N
  • 生成
    Gen 1
  • 认证标准
    Visual inspection
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产品状态
英飞凌封装名称
封装名
封装尺寸
封装类型
湿度
防潮封装
无铅
无卤素
符合RoHS标准
IR HiRel rad hard GaN transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). This device, IG1C052N10RCDV, is in a bare die package and has a 100% visual inspection only screening level.

特性

  • Single event effect (SEE) hardened
  • Ultra low RDS(on)
  • Low total gate charge
  • Zero reverse recovery charge
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • Bare die
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