IMSQ120R053M2HB
新品
现货，推荐
符合RoHS标准
无铅

IMSQ120R053M2HB

新品
CoolSiC™ 1200 V SiC MOSFET G2 and Schottky diode G5 in top side cooled Q-DPAK dual die-pad package
数据手册
封装

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IMSQ120R053M2HB
IMSQ120R053M2HB
数据手册


商品详情

  • Ciss
    1010 pF
  • Coss
    41 pF
  • 最高 Ptot
    365 week
  • Qgd
    6.9 nC
  • QG
    28 nC
  • RDS (on) (@ Tj = 25°C)
    52.6 mΩ
  • 最高 RthJA
    62 K/W
  • 最高 RthJC
    0.64 K/W
  • 最高 Tj
    175 °C
  • 最高 VDS
    1200 V
  • 安装
    SMD
  • 封装
    PG-HDSOP-16-U03
  • 工作温度 范围
    -55 °C 至 175 °C
  • 引脚数量
    16 Pins
  • 技术
    CoolSiC™ G2, CoolSiC™ G5
  • 质量等级
    Industrial

推荐的
OPN
IMSQ120R053M2HBXUMA1
产品状态 active and preferred
英飞凌封装名称
PG-HDSOP-16
封装名 N/A
封装尺寸 750
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT,MY

产品状态
Active
英飞凌封装名称
PG-HDSOP-16
封装名 -
封装尺寸 750
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT,MY
CoolSiC™ 1200 V boost stage combining a 52.6 mOhm CoolSiC™ MOSFET and 20 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.

特性

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 31 A at TC = 25°C
  • RDS = 52.6 mΩ, VGS = 18 V, Tvj = 25°C
  • IF = 20 A
  • Optimized layout for fast switching
  • Very low switching losses
  • No reverse recovery current
  • High surge-current Schottky diode
  • Short circuit withstand time 2 µs
  • Best-in-class VGS(th): 4.2 V
  • .XT interconnection technology

产品优势

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower BOM cost
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