IPB018N03LF2S
在产
符合RoHS标准

IPB018N03LF2S

StrongIRFET™ 2 power MOSFET 30 V in D²PAK
数据手册
封装

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IPB018N03LF2S
IPB018N03LF2S
数据手册

  • 最高 ID (@25°C)
    125 A
  • QG (typ @10V)
    95 nC
  • QG (typ @4.5V)
    46 nC
  • 最高 RDS (on) (@4.5V)
    2.5 mΩ
  • 最高 RDS (on) (@10V)
    1.8 mΩ
  • Special Features
    Logic Level
  • 最高 VDS
    30 V
  • VGS(th) 范围
    1.35 V 至 2.35 V
  • VGS(th)
    1.85 V
  • 封装
    D2PAK (TO-263)
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N

推荐的
OPN
IPB018N03LF2SATMA1
产品状态 active
英飞凌封装名称
PG-TO263-3
封装名 N/A
封装尺寸 800
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
CN
晶圆产地
MY

产品状态
Active
英飞凌封装名称
PG-TO263-3
封装名 -
封装尺寸 800
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
CN
晶圆产地
MY
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 1.8 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB018N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.

特性

  • General purpose products
  • Excellent robustness
  • Superior price/performance ratio
  • Broad availability at distributors
  • Standard packages and pin-out
  • High manufacturing & supply standards

产品优势

  • Addresses a wide range of applications
  • Reliable performance
  • High quality and competitive pricing
  • Convenient selection & purchasing
  • Ease of design-in
  • Simplified product services

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