IRFB4115G

150V 单 N 通道 HEXFET 功率 MOSFET,采用无铅无卤素 TO-220AB 封装

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IRFB4115G
IRFB4115G

商品详情

  • ID (@ TC=25°C) max
    104 A
  • ID max
    74 A
  • ID (@ TC=100°C) max
    74 A
  • Ptot max
    380 W
  • Qgd
    26 nC
  • QG
    77 nC
  • RDS (on) (@10V) max
    11 mΩ
  • RDS (on) max
    11 mΩ
  • RthJC max
    0.4 K/W
  • Tj max
    175 °C
  • VDS max
    150 V
  • VGS max
    20 V
  • Mounting
    THT
  • Package
    TO-220
  • Polarity
    N
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
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产品优势

  • 符合 RoHS 规定

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