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Overview

The automotive grade 600 V CoolMOS™ S7A superjunction MOSFET addresses xEV applications where MOSFETs are switched at low frequency with low conduction loss, such as HV eFuse, HV eDisconnect, and on-board charger in the slow-switching leg of the totem-pole PFC stage, or any front-end active rectifier. The 600 V CoolMOS™ S7A can be provided with or without integrated temperature sensor.

Key features
  • Smallest RDS(on)*Cos
  • Smallest RDS(on) in SMD package
  • Optimized for conduction 
  • Improved thermal resistance
  • Available with temperature sensor
  • Combine with CFD7A & SiC in Q-DPAK

 

 

Applications
On-board charging (OBC)

Products

About

Optimized for low conduction losses: 600 V CoolMOS™ S7A MOSFETs

The new MOSFET design offers a cost-optimized, distinctively low on-resistance RDS(on) of 1-10 mΩ, enabling increased power density and minimized conduction losses while meeting the highest automotive quality going well beyond the AEC-Q101 standard. Both the top-side cooled Q-DPAK and bottom-side cooled Q-DPAK packages offer increased efficiency and controllability thanks to their intrinsic kelvin source, high power dissipation capability, and innovative cooling concept.

Optimal switching performance for low-frequency switching applications

The CoolMOS™ S7A family is built on a successful technical optimization of the renowned CoolMOS™ 7 technology, removing the device’s redundant features related to switching performance, as they are not needed in low-frequency switching applications. Thus, this new Infineon technology is cost-optimized, without neglecting quality or performance, and designed to meet the highest automotive quality going well beyond the AEC Q101 standard.

Bigger chip implementations with the lowest RDS(on) in SMD package

Q-DPAK top-side cooled innovative technology allows for bigger chip implementations reaching the lowest RDS(on) in the market in an SMD. The cooling concept it offers enables the thermal decoupling of board and semiconductor. Therefore, higher chip temperatures are possible (surge/overload capacity) and designers can benefit from the increased flexibility in the PCB design to produce lower-resistance commutation loops.

Discover Q-DPAK Top Side Cooling Package

Optimized for low conduction losses: 600 V CoolMOS™ S7A MOSFETs

The new MOSFET design offers a cost-optimized, distinctively low on-resistance RDS(on) of 1-10 mΩ, enabling increased power density and minimized conduction losses while meeting the highest automotive quality going well beyond the AEC-Q101 standard. Both the top-side cooled Q-DPAK and bottom-side cooled Q-DPAK packages offer increased efficiency and controllability thanks to their intrinsic kelvin source, high power dissipation capability, and innovative cooling concept.

Optimal switching performance for low-frequency switching applications

The CoolMOS™ S7A family is built on a successful technical optimization of the renowned CoolMOS™ 7 technology, removing the device’s redundant features related to switching performance, as they are not needed in low-frequency switching applications. Thus, this new Infineon technology is cost-optimized, without neglecting quality or performance, and designed to meet the highest automotive quality going well beyond the AEC Q101 standard.

Bigger chip implementations with the lowest RDS(on) in SMD package

Q-DPAK top-side cooled innovative technology allows for bigger chip implementations reaching the lowest RDS(on) in the market in an SMD. The cooling concept it offers enables the thermal decoupling of board and semiconductor. Therefore, higher chip temperatures are possible (surge/overload capacity) and designers can benefit from the increased flexibility in the PCB design to produce lower-resistance commutation loops.

Discover Q-DPAK Top Side Cooling Package

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