OptiMOS™ 6 60 V

OptiMOS™ 6 60 V - Benchmark technology for efficiency, soft-switching topologies, and compact thermal designs.

概述

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

关键特性

  • >37% less RDS(on) vs OptiMOS™ 5 in SSO8
  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
  • Ideal for soft-switching applications