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REF_10KW_3LBUCK_SIC400

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3-level flying capacitor buck with CoolSiC™ MOSFET 400 V G2
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REF_10KW_3LBUCK_SIC400
REF_10KW_3LBUCK_SIC400
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商品详情

  • 主板类型
    Reference Board
  • 描述
    3 level flying capacitor buck reference design with CoolSiC™ MOSFET 400 V G2
  • 系列
    CoolSiC™
  • 输入信号电压
    55 V to 400 V
  • 输入类型
    DC
  • 输出功率 max
    10000 W
  • 输出电流 max
    34 A
  • 配置
    1ED3141MU12F, 2EDN7534R, IMT40R011M2H, IMT65R010M2H, IPDQ60R007CM8, ISSI20R11H, TLI4971-A050T5-E0001, XMC4400-F100F512 BA
推荐的
OPN
REF10KW3LBUCKSIC400TOBO1
产品状态 active and preferred
英飞凌封装名称 --
封装名 N/A
包装尺寸 1
包装类型 CONTAINER
湿度 N/A
防潮包装 DRY
无铅 No
无卤素 No
符合RoHS标准 No
Infineon stock last updated:

产品状态
Active
英飞凌封装名称 --
封装名 -
包装尺寸 1
包装类型 CONTAINER
湿度 -
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
3-level flying capacitor buck with CoolSiC™ MOSFET 400 V G2. Allows to perform a comparison between 2-level versus 3-level topologies. The goal is to allow designs to determine the advantages of the 3-level topology using the 400V SiC MOSFET.

特性

  • Evaluate CoolSiC™ 400 V/650 V G2 MOSFETs
  • Compare 3-level vs 2-level topologies
  • Flying capacitor balancing algorithm
  • Compact planar transformer gate supply
  • Test bipolar vs unipolar gate drive
  • Adjustable gate-drive voltage
  • Supports Kelvin-/Power-Source gate drive
  • Low inductance high-power design
  • Heatsink-based cooling system
  • Supports Kelvin-/Power-Source gate drive

产品优势

  • Lower inductor voltage swing (-50%)
  • Ripple frequency double vs MOSFET switch
  • Inductance value reduced by 25%
  • Inductor optimized for higher efficiency
  • Smaller inductor boosts power density
  • Lower MOSFET blocking voltage
  • Significantly reduced switching losses

Bill of Material

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