新品
现货，推荐
符合RoHS标准

AIKBE40N65RF5

新品
Automotive Silicon-carbide (SiC) Hybrid Discrete 650 V in D2PAK-7L
数据手册
封装

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AIKBE40N65RF5
AIKBE40N65RF5
数据手册

商品详情

  • Eoff
    0.09 mJ
  • Eon
    0.16 mJ
  • IC (@ 100°) max
    62 A
  • IC (@ 100°) max
    62 A
  • IC (@ 25°) max
    96 A
  • ICpuls max
    120 A
  • IF max
    46 A
  • IFpuls max
    90 A
  • QGate
    90 nC
  • td(off)
    112 ns
  • td(on)
    14 ns
  • tf
    14 ns
  • tr
    6 ns
  • VF
    1.45 V
  • 封装
    TO263-7
  • 开关频率
    40 Hz to 100 Hz
  • 技术
    IGBT TRENCHSTOP™ 5 + CoolSiC Schottky Diode Gen5
  • 推出年份
    2025
  • 目前计划的可用性至少到
    2033
推荐的
OPN
AIKBE40N65RF5ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode with best efficiency in hard switching & resonant topologies to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC.

特性

  • VCE = 650 V
  • IC = 40 A
  • 650 V breakdown voltage
  • TrenchstopTM 5 fast-switching IGBT
  • CoolSiCTM Schottky diode G5
  • Maximum junction temperature Tvjmax = 175°C

产品优势

  • Low gate charge QG
  • Kelvin emitter for optimized switching

应用

文档

文档

设计资源

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