CY62128ELL-45SXAT
现货,推荐
符合RoHS标准
无铅

CY62128ELL-45SXAT

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CY62128ELL-45SXAT
CY62128ELL-45SXAT


商品详情

  • 密度
    1 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 最高 工作电压 (VCCQ)
    5.5 V
  • 工作电压 范围
    4.5 V 至 5.5 V
  • 引线球表面
    Pure Sn;Ni/Pd/Au
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    128K x 8
  • 质量等级
    Automotive
  • 速度
    45 ns

OPN
CY62128ELL-45SXAT
产品状态 active and preferred
英飞凌封装名称
封装名 SOIC-32 (51-85081)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TW
晶圆产地
US

产品状态
Active
英飞凌封装名称
封装名 SOIC-32 (51-85081)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TW
晶圆产地
US
CY62128ELL-45SXAT is a 1-Mbit (128 K × 8) CMOS static RAM with 45 ns access for 4.5 V to 5.5 V systems. It supports industrial and automotive-A temperature grades (–40°C to +85°C) and uses dual chip enables (CE1/CE2) plus OE for easy memory expansion and automatic power-down. Standby current is 1 µA typical and 4 µA max (industrial), with data retention down to 2 V (VDR) when deselected.

特性

  • 128K × 8 SRAM organization
  • 45 ns read cycle time (tRC)
  • 4.5 V to 5.5 V VCC operation
  • 1.3 mA typ ICC at 1 MHz
  • 1 µA typ standby current
  • Auto CE power-down (ISB2)
  • CE1/CE2 and OE chip controls
  • High-Z outputs when deselected
  • TTL-compatible input levels
  • VIH 2.2 V, VIL 0.8 V thresholds
  • 10 pF max input capacitance
  • tDOE 22 ns OE to data valid

产品优势

  • Fast 45 ns cycles cut latency
  • 5 V supply fits legacy designs
  • 1.3 mA typ lowers active power
  • 1 µA standby extends battery life
  • Auto power-down saves idle energy
  • CE1/CE2 simplify memory expansion
  • High-Z outputs ease bus sharing
  • TTL levels ease MCU/CPU interface
  • Defined thresholds reduce errors
  • Low capacitance eases timing margins
  • 22 ns OE read improves response
  • Lower standby cuts thermal load

应用

文档

设计资源

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