CY62128EV30LL-45ZAXIT
现货，推荐
符合RoHS标准
无铅

CY62128EV30LL-45ZAXIT

数据手册
封装

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CY62128EV30LL-45ZAXIT
CY62128EV30LL-45ZAXIT
数据手册


商品详情

  • 密度
    1 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 最高 工作电压 (VCCQ)
    3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Pure Sn
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    128K x 8
  • 质量等级
    Industrial
  • 速度
    45 ns

推荐的
OPN
CY62128EV30LL-45ZAXIT
产品状态 active and preferred
英飞凌封装名称
PG-TSOP-32
封装名 STSOP-32 (51-85094)
封装尺寸 1500
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TW
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-TSOP-32
封装名 STSOP-32 (51-85094)
封装尺寸 1500
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TW
晶圆产地
US
CY62128EV30LL-45ZAXIT is a 1-Mbit (128K × 8) CMOS SRAM for low-power embedded memory, with 17 address lines and 8 bidirectional I/Os plus OE/WE and dual chip enables (CE1/CE2). It operates from 2.2 V to 3.6 V over -40°C to +85°C and supports 45 ns access. Typical ICC is 1.3 mA at 1 MHz (16 mA max at fmax), while automatic CE power-down reduces standby to 1 µA typical (4 µA max). Pb-free 32-pin STSOP (ZA).

特性

  • 1-Mbit SRAM organized as 128K × 8
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • Automatic CE power-down (ISB1/2)
  • Standby current 1 µA typ, 4 µA max
  • Active current 1.3 mA typ at 1 MHz
  • Data retention at VCC = 1.5 V (VDR)
  • Data retention current 3 µA max
  • OE/WE tri-state control of I/O bus
  • 10 pF max input/output capacitance
  • ESD > 2001 V (MIL-STD-883 3015)
  • -40°C to +85°C operating ambient

产品优势

  • Fits small code/data storage needs
  • 45 ns enables fast memory accesses
  • 2.2–3.6 V works with 3 V rails
  • Power-down cuts idle consumption
  • µA standby extends battery life
  • Low active current reduces power
  • Retains data in backup mode
  • 3 µA max eases keepalive design
  • Tri-state bus simplifies expansion
  • Low capacitance helps signal integrity
  • ESD robustness reduces field fails
  • -40°C to +85°C boosts reliability

应用

文档

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