CY62148EV30LL-55SXI
现货，推荐
符合RoHS标准
无铅

CY62148EV30LL-55SXI

数据手册
封装

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CY62148EV30LL-55SXI
CY62148EV30LL-55SXI
数据手册


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 最高 工作电压 (VCCQ)
    3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Pure Sn
  • 接口
    Parallel
  • 目前计划的可用性至少到
    See roadmap
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    512K x 8
  • 质量等级
    Industrial
  • 速度
    55 ns

推荐的
OPN
CY62148EV30LL-55SXI
产品状态 active and preferred
英飞凌封装名称
PG-DSO-32
封装名 SOIC-32 (51-85081)
封装尺寸 500
封装类型 TUBE
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TW
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-DSO-32
封装名 SOIC-32 (51-85081)
封装尺寸 500
封装类型 TUBE
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TW
晶圆产地
US
CY62148EV30LL-55SXI is a 4-Mbit (512K × 8) CMOS asynchronous SRAM in a 32-pin Pb-free SOIC (55 ns speed bin). It operates from 2.2 V to 3.6 V across –40°C to +85°C and uses CE/OE/WE control for simple read/write and memory expansion. At VCC = 3.60 V, typical ICC is 3.5 mA at 1 MHz (6 mA max), and standby is 2.5 µA typical (7 µA max) with automatic power-down when CE is HIGH, supporting portable embedded memory.

特性

  • 4-Mbit SRAM (512K × 8)
  • 2.2 V to 3.6 V supply
  • 45 ns read cycle time (tRC)
  • 22 ns OE LOW to data valid
  • Auto power-down when CE HIGH
  • Standby current 2.5 µA typ
  • Standby current 7 µA max
  • Active current 3.5 mA at 1 MHz
  • Data retention at VCC = 1.5 V
  • Data retention current 8.8 µA max
  • I/O high-Z when CE/OE HIGH
  • 10 pF max input/output capacitance

产品优势

  • Fast reads reduce CPU wait states
  • Wide VCC fits 3.3 V designs
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current saves energy
  • 1.5 V retention preserves data
  • High-Z outputs ease bus sharing
  • Low I/O caps support fast edges
  • Quick OE access boosts throughput
  • Simple CE/OE control expands memory
  • Lower heat from low supply current
  • Predictable timings simplify design

应用

文档

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