CY62157G30-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62157G30-45BVXIT

数据手册
封装

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CY62157G30-45BVXIT
CY62157G30-45BVXIT
数据手册


商品详情

  • 密度
    8 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    512K x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62157G30-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW
CY62157G30-45BVXIT is an 8-Mbit (512K × 16) MoBL static RAM with embedded ECC that detects and corrects single-bit errors in accessed locations. It operates from 2.2 V to 3.6 V over -40°C to 85°C with 45 ns access time. Standby current is 1.4 µA typical (6.5 µA max). A byte power-down feature forces standby when BHE and BLE are disabled. It is offered in a Pb-free 48-ball VFBGA package.

特性

  • 8-Mbit SRAM (512K × 16)
  • Embedded ECC corrects 1-bit errors
  • ERR pin flags corrected 1-bit errors
  • 45 ns read/write cycle time
  • VCC supply 1.65 V to 3.6 V
  • Standby current 6.5 µA max
  • Data retention at VDR = 1.0 V
  • Dual chip enable inputs (CE1, CE2)
  • Byte writes via BHE/BLE signals
  • Hi-Z outputs when deselected/OE HIGH
  • Byte power-down via BHE & BLE HIGH
  • HBM ESD rating >2001 V

产品优势

  • ECC improves data integrity in SRAM
  • ERR output simplifies error handling
  • 45 ns access supports fast CPUs
  • 1.65–3.6 V fits multi-rail systems
  • 6.5 µA max cuts standby power
  • 1.0 V retention saves backup energy
  • Dual CE supports simple bank select
  • Byte writes reduce bus bandwidth use
  • Hi-Z outputs ease bus sharing
  • Byte power-down saves idle power
  • HBM >2001 V improves robustness
  • Clear timing specs speed validation

应用

文档

设计资源

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