CY62158EV30LL-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62158EV30LL-45BVXIT

数据手册
封装

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CY62158EV30LL-45BVXIT
CY62158EV30LL-45BVXIT
数据手册


商品详情

  • 密度
    8 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    1M x 8
  • 质量等级
    Industrial

推荐的
OPN
CY62158EV30LL-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH,TW
晶圆产地
TW,US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH,TW
晶圆产地
TW,US
CY62158EV30LL-45BVXIT is an 8-Mbit (1024K × 8) CMOS SRAM (MoBL) for low-power, battery-operated designs such as portable embedded systems. It provides 45 ns access and operates from 2.2 V to 3.6 V over -40°C to +85°C. Typical ICC is 6 mA at 1 MHz (7 mA max) and 18 mA typical at fmax (25 mA max). Automatic chip-enable power-down cuts standby to 2 µA typical (8 µA max). 48-ball Pb-free VFBGA (BV).

特性

  • 8-Mbit SRAM organized 1024K × 8
  • 45 ns read/write cycle time
  • 22 ns OE to data valid
  • 2.2 V to 3.6 V single supply
  • 6 mA typ active at 1 MHz
  • 18 mA typ at fmax, 25 mA max
  • 2 µA typ standby, 8 µA max
  • Auto power-down when deselected
  • Data retention at VCC ≥ 1.5 V
  • 3.2 µA typ ICCDR, 8 µA max
  • Tri-state outputs with OE control
  • CE1/CE2 chip enable for expansion

产品优势

  • 45 ns cycles reduce access latency
  • 22 ns OE speeds read data access
  • 2.2–3.6 V fits 3.3 V systems
  • 6 mA active extends battery life
  • Low standby cuts sleep-mode drain
  • Auto power-down saves energy idle
  • 1.5 V retention preserves state
  • Tri-state I/O simplifies bus sharing
  • CE1/CE2 enables easy scaling
  • CMOS I/O levels ease MCU interface
  • Low leakage helps data integrity
  • High speed boosts system throughput

应用

文档

设计资源

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