CY62167EV18LL-55BVXI
现货，推荐
符合RoHS标准
无铅

CY62167EV18LL-55BVXI

数据手册
封装

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CY62167EV18LL-55BVXI
CY62167EV18LL-55BVXI
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.65 V 至 2.25 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    See roadmap
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62167EV18LL-55BVXI
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2400
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH,TW
晶圆产地
CN,US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2400
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH,TW
晶圆产地
CN,US
CY62167EV18LL-55BVXI is a 16-Mbit (1 M × 16) CMOS asynchronous SRAM for battery-powered embedded systems. It operates from 1.65 V to 2.25 V over -40°C to +85°C and is specified for 55 ns access. Automatic power-down reduces standby current to 1.5 µA typical (12 µA max). Active current is 2.2 mA typical at 1 MHz (4.0 mA max). It is offered in a 48-ball 6 × 8 × 1 mm Pb-free VFBGA package.

特性

  • 1 M × 16 CMOS SRAM array
  • 55 ns read/write cycle time
  • 1.65 V to 2.25 V VCC operation
  • 1.5 µA typ standby current
  • 12 µA max standby current
  • 2.2 mA typ ICC at 1 MHz
  • 30 mA max ICC at fmax
  • OE/CE tri-state outputs (High-Z)
  • Byte write via BHE/BLE signals
  • 10 pF max CIN/COUT
  • ESD >2001 V (MIL-STD-883)
  • -40°C to +85°C ambient range

产品优势

  • Fits 16-bit buses, fewer chips
  • 55 ns supports fast SRAM access
  • Low VCC suits low-voltage SoCs
  • µA standby extends battery life
  • Low max standby improves sleep power
  • Low active mA cuts runtime power
  • 30 mA max bounds supply sizing
  • High-Z outputs simplify bus sharing
  • Byte writes reduce write bandwidth
  • Low capacitance eases signal timing
  • ESD robustness improves handling yield
  • Wide temp range improves reliability
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