CY62167EV30LL-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62167EV30LL-45BVXIT

High-Density 16 MBit MoBL™ Parallel SRAM for Industrial Applications with Wide Temperature Range
数据手册
封装

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CY62167EV30LL-45BVXIT
CY62167EV30LL-45BVXIT
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62167EV30LL-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US
CY62167EV30LL-45BVXIT is a 16-Mbit CMOS SRAM organized as 1M × 16 or 2M × 8 with 45 ns access. It operates from 2.2 V to 3.6 V over the Automotive-A range (–40°C to +85°C). Low-power operation includes automatic power-down when deselected, 1.5 µA typical standby (12 µA max), and 2.2 mA typical ICC at 1 MHz. It supports byte enables (BHE/BLE) and is offered in Pb-free 48-ball VFBGA.

特性

  • 16-Mbit SRAM, 1M×16 or 2M×8
  • 45 ns read/write cycle time
  • VCC operating range 2.2 V to 3.6 V
  • Automatic power-down on deselect
  • Standby current 1.5 µA typ
  • Active current 2.2 mA at 1 MHz typ
  • Data retention at VCC down to 1.5 V
  • ICCDR 10 µA max at VCC=1.5–3.0 V
  • OE/CE/BHE/BLE tri-state control
  • Input/output leakage ±1 µA max

产品优势

  • Fits 16-bit or 8-bit bus designs
  • 45 ns access supports fast reads
  • 2.2–3.6 V suits 3.3 V systems
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data during VCC droop
  • 10 µA retention enables backup
  • Tri-state eases bus sharing/expand
  • Low leakage improves low-power IO
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