CY62167G-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62167G-45BVXIT

数据手册
封装

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CY62167G-45BVXIT
CY62167G-45BVXIT
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    4.5 V 至 5.5 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62167G-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW
CY62167G-45BVXIT is a 16-Mbit MoBL CMOS asynchronous SRAM organized as 1M × 16 (or 2M × 8) with embedded ECC for single-bit error correction. It operates from 4.5 V to 5.5 V with 45 ns access time over −40°C to 85°C. Dual chip enables, BHE/BLE byte writes, and byte power-down (BHE and BLE disabled) reduce standby current to 16 µA max, enabling battery-backed buffers and embedded systems.

特性

  • 16-Mbit SRAM; 1M×16 or 2M×8
  • Embedded ECC single-bit correction
  • ERR output flags corrected read errors
  • 45 ns or 55 ns read cycle time
  • OE to data valid: 22 ns (45 ns)
  • Supply: 1.65–2.2 V or 4.5–5.5 V
  • Standby current max 16 µA (5 V)
  • Byte writes via BHE/BLE enables
  • Byte power-down when BHE/BLE high
  • Tri-state I/O when deselected
  • TTL-compatible inputs and outputs
  • Operating temp: –40°C to +85°C

产品优势

  • ECC improves data integrity in SRAM
  • ERR pin simplifies fault monitoring
  • 45/55 ns access supports fast CPUs
  • 22 ns OE timing reduces read wait
  • Dual VCC options ease system reuse
  • 16 µA max standby extends battery
  • Byte write saves bandwidth and power
  • Byte power-down cuts idle current
  • Tri-state outputs simplify bus sharing
  • TTL I/O eases interfacing to logic
  • –40°C to +85°C enables harsh use
  • 16-Mbit density cuts ext memory need

应用

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