CY7C1041G30-10BAJXET
现货,推荐
符合RoHS标准
无铅

CY7C1041G30-10BAJXET

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CY7C1041G30-10BAJXET
CY7C1041G30-10BAJXET


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 125 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    256K x 16
  • 质量等级
    Automotive(E)
  • 速度
    10 ns

OPN
CY7C1041G30-10BAJXET
产品状态 active and preferred
英飞凌封装名称
封装名 FBGA-48 (001-85259)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 FBGA-48 (001-85259)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW
CY7C1041G30-10BAJXET is an AEC-Q100 qualified 4-Mbit (256K × 16) asynchronous SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V with 10 ns access time, supports byte writes via BLE/BHE, and provides data retention down to 1.0 V. Automotive-E grade and a Pb-free 48-ball VFBGA package (tape-and-reel) target reliable nonvolatile-like data storage in automotive ECUs.

特性

  • 4-Mbit SRAM (256K x 16)
  • Embedded ECC single-bit correct
  • tAA address access time 10 ns
  • Read cycle time tRC 10 ns
  • OE to data valid tDOE 4.5 ns
  • Byte write via BHE/BLE controls
  • Dual chip enables CE1/CE2 logic
  • I/O Hi-Z when deselected/disabled
  • VCC operating range 2.2 V to 3.6 V
  • Data retention at 1.0 V
  • ICC 40 mA typ, 50 mA max
  • ISB2 standby 6 mA typ, 14 max

产品优势

  • Fits 16-bit systems, fewer chips
  • Corrects 1-bit errors for integrity
  • 10 ns access cuts read latency
  • 10 ns cycles support fast bus ops
  • 4.5 ns OE speeds async reads
  • Byte writes reduce write bandwidth
  • CE1/CE2 eases bus decoding
  • Hi-Z outputs simplify bus sharing
  • 2.2-3.6 V works with 3.3 V rails
  • 1.0 V retention saves backup power
  • Known ICC helps power budgeting
  • Low standby reduces idle power
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