CY7C1041G30-10ZSXI
现货,推荐
符合RoHS标准
无铅

CY7C1041G30-10ZSXI

High-Performance 4 Mbit FAST SRAM with Parallel Interface and Industrial Qualification

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CY7C1041G30-10ZSXI
CY7C1041G30-10ZSXI


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Ni/Pd/Au
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    256K x 16
  • 质量等级
    Industrial
  • 速度
    10 ns

OPN
CY7C1041G30-10ZSXI
产品状态 active and preferred
英飞凌封装名称
封装名 TSOP-II-44 (51-85087)
封装尺寸 1350
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
PH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 TSOP-II-44 (51-85087)
封装尺寸 1350
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
PH
晶圆产地
TW
CY7C1041G30-10ZSXI is a 4-Mbit (256K × 16) asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over -40°C to 85°C and supports 10 ns access time. At max VCC, operating ICC is 45 mA max (38 mA typ at 100 MHz), and automatic CE power-down reduces standby current (ISB2 8 mA max). It supports BLE/BHE byte access and OE/WE/CE control.

特性

  • 4-Mbit SRAM (256K × 16)
  • Embedded ECC single-bit correct
  • ERR pin flags corrected read errors
  • Address access time tAA 10 ns/15 ns
  • Read cycle time tRC 10 ns/15 ns
  • OE to data valid tDOE 4.5 ns max
  • Byte write/read via BHE and BLE
  • Automatic CE power-down mode
  • Data retention down to 1.0 V
  • Industrial temp -40°C to +85°C
  • TTL-compatible inputs and outputs

产品优势

  • ECC improves data integrity in SRAM
  • ERR pin enables fault monitoring
  • 10 ns access supports fast CPU buses
  • Fast tDOE reduces read latency
  • Byte enables cut bandwidth and power
  • CE power-down lowers idle current
  • 1.0 V retention keeps backup data
  • Wide temp range boosts reliability
  • TTL I/O simplifies logic interfacing
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