CY7C1061G30-10BV1XET
现货，推荐
符合RoHS标准
无铅

CY7C1061G30-10BV1XET

数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY7C1061G30-10BV1XET
CY7C1061G30-10BV1XET
数据手册


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 125 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    1Mb x 16
  • 质量等级
    Automotive(E)
  • 速度
    10 ns

推荐的
OPN
CY7C1061G30-10BV1XET
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW
CY7C1061G30-10BV1XET is a 16-Mbit (1 M × 16) asynchronous CMOS SRAM with embedded ECC for automotive use. It operates from 2.2 V to 3.6 V over −40°C to 125°C and supports 10 ns access time (tAA) and 10 ns read/write cycle time (tRC/tWC). ECC detects and corrects single-bit read errors. BLE/BHE enable upper/lower byte writes with CE, OE, and WE control. It is supplied in a Pb-free 48-ball VFBGA.

特性

  • 16-Mbit (1 M x 16) SRAM
  • ECC corrects 1-bit read errors
  • 10 ns address access time (tAA)
  • 10 ns read cycle time (tRC)
  • 10 ns write cycle time (tWC)
  • Byte writes via BLE/BHE
  • VCC operating: 2.2 V to 3.6 V
  • Data retention at VCC = 1.0 V
  • ICC typ 90 mA at fMAX
  • ISB2 typ 20 mA standby
  • OE to data: 5 ns (tDOE)
  • Output High-Z when deselected

产品优势

  • Higher data integrity in SRAM reads
  • Fewer soft errors to debug in field
  • Fast reads for tight timing margins
  • Predictable read throughput
  • Fast writes for real-time logging
  • Byte writes reduce bus traffic
  • Works with 2.2 V–3.6 V rails
  • Retain data during low-power sleep
  • Lower active power at high speed
  • Lower standby power when idle
  • Faster OE improves read latency
  • High-Z simplifies bus sharing

应用

文档

设计资源

合作伙伴解决方案

开发者社区