CY7C1061G30-10ZSXIT
现货,推荐
符合RoHS标准
无铅

CY7C1061G30-10ZSXIT

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CY7C1061G30-10ZSXIT
CY7C1061G30-10ZSXIT


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Pure Sn
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial
  • 速度
    10 ns

OPN
CY7C1061G30-10ZSXIT
产品状态 active and preferred
英飞凌封装名称
封装名 TSOP-II-54 (51-85160)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 TSOP-II-54 (51-85160)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW
The CY7C1061G30-10ZSXIT is a 16-Mbit (1M × 16) fast asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over −40 to 85°C (industrial) and offers 10 ns access time. Dual chip enables and BLE/BHE byte enables support flexible read/write control. In automatic CE power-down, ISB2 is 20 mA typical. Supplied in a 54-pin TSOP II Pb-free tape-and-reel package.

特性

  • 16-Mbit (1M x 16) async SRAM
  • Embedded ECC single-bit correction
  • ERR output flags corrected 1-bit
  • tAA access time 10 ns/15 ns
  • 16-bit I/O with BLE/BHE byte writes
  • Single or dual chip-enable inputs
  • Auto CE power-down (ISB1/ISB2)
  • ICC typ 90 mA at 100 MHz
  • 1.0 V data retention mode
  • TTL-compatible I/O levels
  • Ambient temp -40°C to +85°C
  • ESD > 2001 V (MIL-STD-883)

产品优势

  • ECC improves SRAM data integrity
  • ERR pin simplifies error monitoring
  • 10 ns access supports fast reads
  • Byte writes reduce write bandwidth
  • CE options ease system integration
  • Auto power-down cuts standby draw
  • 1.0 V retention lowers backup power
  • TTL levels ease bus interfacing
  • -40°C to +85°C boosts reliability
  • High ESD improves handling margin
  • Lower active current reduces heat
  • Async SRAM simplifies controller logic
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