CY7C1471BV33-133BZI
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CY7C1471BV33-133BZI

数据手册
封装

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CY7C1471BV33-133BZI
CY7C1471BV33-133BZI
数据手册


商品详情

  • ECC
    N
  • Frequency
    133 MHz
  • 密度
    72 MBit
  • 峰值回流温度
    220 °C
  • 工作温度 范围
    0 °C 至 70 °C
  • 工作电压 范围
    3.14 V 至 3.63 V
  • 引线球表面
    Sn/Pb
  • 接口
    Parallel
  • 数据宽度
    x 36
  • 架构
    NoBL, Flow-through
  • 片上端接
    N
  • 系列
    NoBL
  • 组织(X x Y)
    2Mb x 36
  • 质量等级
    Industrial
  • 银行切换
    N

推荐的
OPN
CY7C1471BV33-133BZI
产品状态 active and preferred
英飞凌封装名称
P -BGA-165
封装名 FBGA-165 (51-85165)
封装尺寸 525
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 No
无卤素 No
符合RoHS标准 No
封装产地
TW
晶圆产地
US

产品状态
Active
英飞凌封装名称
P -BGA-165
封装名 FBGA-165 (51-85165)
封装尺寸 525
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TW
晶圆产地
US
CY7C1471BV33-133BZI is a 72-Mbit synchronous flow-through burst SRAM (2M × 36) using NoBL architecture to eliminate dead cycles on write-to-read transitions. It supports 133 MHz operation with 6.5 ns clock-to-data valid, registered inputs, and pipelined read/write/deselect cycles. Features include up to 4-word linear or interleaved burst, byte write (BWX), three chip enables plus OE, and ZZ sleep mode.

特性

  • 72-Mbit sync burst SRAM
  • NoBL eliminates dead cycles
  • Up to 133 MHz, 7.5 ns cycle
  • Data transferred every clock
  • 6.5 ns clock-to-output (tCDV)
  • Registered synchronous inputs
  • Byte write using BWX + WE
  • Linear or interleaved burst order
  • 3 chip enables (CE1/CE2/CE3)
  • Asynchronous OE tri-state control
  • Auto power-down via ZZ or CE
  • IEEE 1149.1 JTAG boundary scan

产品优势

  • Back-to-back R/W boosts throughput
  • Zero wait states cut bus stalls
  • 133 MHz supports fast processing
  • Every-clock data raises bandwidth
  • 6.5 ns tCDV reduces read latency
  • Registered inputs ease timing closure
  • Byte writes reduce write bandwidth
  • Burst modes match CPU/DSP bursts
  • 3 chip enables simplify expansion
  • OE tri-state eases bus sharing
  • Power-down reduces idle power
  • JTAG speeds board test and debug

应用

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