CY7C1515KV18-250BZXC
现货，推荐
符合RoHS标准
无铅

CY7C1515KV18-250BZXC

数据手册
封装

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CY7C1515KV18-250BZXC
CY7C1515KV18-250BZXC
数据手册


商品详情

  • Frequency
    250 MHz
  • 密度
    72 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    0 °C 至 70 °C
  • 工作电压 范围
    1.7 V 至 1.9 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 系列
    QDR-II
  • 组织(X x Y)
    2M x 36
  • 质量等级
    Commercial

推荐的
OPN
CY7C1515KV18-250BZXC
产品状态 active and preferred
英飞凌封装名称
PG-BGA-165
封装名 FBGA-165 (51-85180)
封装尺寸 272
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
PG-BGA-165
封装名 FBGA-165 (51-85180)
封装尺寸 272
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
TW
CY7C1515KV18-250BZXC is a 72-Mbit (2M × 36) QDR II synchronous pipelined SRAM with separate read and write data ports for concurrent transactions and no bus turnarounds. It supports four-word burst operation and runs up to 250 MHz clock with DDR transfers. Core VDD is 1.7 V to 1.9 V and VDDQ is 1.4 V to VDD. Available as a 165-ball FBGA Pb-free device for 0 to 70°C commercial operation.

特性

  • Separate read/write data ports
  • 333 MHz clock, 666 MHz DDR data
  • Four-word burst per access
  • 1.5-cycle read latency (DOFF=H)
  • 1-cycle read latency (DOFF=L)
  • K/K and C/C differential clocks
  • Echo clocks CQ/CQ for capture
  • Multiplexed address for both ports
  • Byte write via BWS inputs
  • Programmable output impedance (ZQ)
  • PLL operates 120 MHz to fMAX
  • VDD 1.7–1.9 V, VDDQ 1.4–VDD

产品优势

  • No bus turnaround, less contention
  • Higher bandwidth at 333 MHz
  • Fewer address toggles, lower EMI
  • Predictable latency for pipelines
  • QDR I compatible timing option
  • Improved DDR timing margins
  • Simplifies high-speed data capture
  • Fewer pins, simpler PCB routing
  • Enables read-modify-write updates
  • Better signal integrity matching
  • Accurate data placement vs skew
  • Supports 1.8 V core, 1.5 V I/O

应用

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