CY7C1645KV18-450BZXI
现货,推荐
符合RoHS标准
无铅

CY7C1645KV18-450BZXI

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CY7C1645KV18-450BZXI
CY7C1645KV18-450BZXI


商品详情

  • ECC
    N
  • Frequency
    450 MHz
  • 密度
    144 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.7 V 至 1.9 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 数据宽度
    x 36
  • 架构
    QDR-II+
  • 片上端接
    N
  • 系列
    QDR-II+
  • 组织(X x Y)
    4Mb x 36
  • 脉冲长度 (Words)
    4
  • 读取延迟(周期)
    2
  • 质量等级
    Industrial
  • 银行切换
    N

OPN
CY7C1645KV18-450BZXI
产品状态 active and preferred
英飞凌封装名称
封装名 FBGA-165 (51-85195)
封装尺寸 105
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 FBGA-165 (51-85195)
封装尺寸 105
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
TW
CY7C1645KV18-450BZXI is a 144-Mbit QDR II+ synchronous pipelined SRAM organized as 4 M × 36 with separate read and write ports to eliminate data bus turnarounds. It supports four-word burst transfers with 2.0-cycle read latency (DOFF HIGH), DDR I/O at 450 MHz clock (900 MHz data rate), and operates from 1.8 V core with 1.4 V to VDD I/O supply. It is offered in a 165-ball Pb-free FBGA, industrial grade.

特性

  • 144-Mbit QDR II+ burst SRAM
  • Separate read and write ports
  • DDR I/O; data at 900 MHz max
  • 450 MHz max clock frequency
  • Four-word burst per access
  • Read latency 2 cycles (DOFF high)
  • QDR I mode: 1-cycle latency (DOFF)
  • Two input clocks K and K
  • Echo clocks CQ and CQ
  • QVLD valid-data output
  • PLL locks after 20 µs stable clock
  • Programmable output impedance (ZQ)

产品优势

  • Eliminates bus turnaround delays
  • Enables high memory bandwidth
  • Cuts address bus frequency needs
  • Simplifies timing with echo clocks
  • Easier data capture with QVLD
  • Pipelines read/write independently
  • Supports read-after-write coherency
  • Adapts to line impedance for SI
  • Reduces board tuning across PVT
  • Faster bring-up via auto PLL lock
  • Depth expansion without wait states
  • Simplifies test with JTAG port

应用

文档

设计资源

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