CY7C2663KV18-450BZI
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CY7C2663KV18-450BZI

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CY7C2663KV18-450BZI
CY7C2663KV18-450BZI


商品详情

  • ECC
    N
  • Frequency
    450 MHz
  • 密度
    144 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.7 V 至 1.9 V
  • 引线球表面
    Sn/Pb
  • 接口
    Parallel
  • 数据宽度
    x 18
  • 架构
    QDR-II+, ODT
  • 片上端接
    Y
  • 系列
    QDR-II+, ODT
  • 组织(X x Y)
    8Mb x 18
  • 脉冲长度 (Words)
    4
  • 读取延迟(周期)
    2.5
  • 质量等级
    Industrial
  • 银行切换
    N

OPN
CY7C2663KV18-450BZI
产品状态 active and preferred
英飞凌封装名称
封装名 FBGA-165 (51-85195)
封装尺寸 105
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 No
无卤素 Yes
符合RoHS标准 No
封装产地
TH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 FBGA-165 (51-85195)
封装尺寸 105
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
TW
CY7C2663KV18-450BZI is a 144-Mbit QDR II+ synchronous pipelined SRAM in an 8M × 18 organization with separate read and write ports for concurrent transactions. It supports 2.5-cycle read latency, four-word burst, and DDR I/O (data transfer at 1100 MHz) with a 450 MHz max clock. Operates at VDD 1.7–1.9 V and VDDQ 1.4 V to VDD, with ODT and echo clocks (CQ/CQ) in a 165-ball FBGA, industrial -40 to 85°C.

特性

  • QDR II+ SRAM, 4-word burst
  • 550 MHz clock, 1100 MHz DDR data
  • Separate read/write data ports
  • Supports concurrent transactions
  • 2.5-cycle read latency (DOFF=1)
  • 1-cycle read latency mode (DOFF=0)
  • On-die termination for D/BWS/K
  • Echo clocks (CQ/CQ) for capture
  • QVLD pin indicates valid output data
  • PLL locks with 20 µs stable clock
  • PLL operates down to 120 MHz
  • VDD 1.7–1.9 V; VDDQ 1.4 V–VDD

产品优势

  • High bandwidth with fewer addresses
  • Faster transfers at 1100 MHz DDR
  • No bus turnarounds, lower latency
  • Read+write same time boosts throughput
  • Predictable 2.5-cycle read timing
  • 1-cycle reads cut access delay
  • ODT reduces external termination BOM
  • CQ/CQ eases timing at high speed
  • QVLD simplifies receive data capture
  • PLL stabilizes data placement
  • Runs PLL even at 120 MHz clocks
  • Works with 1.4 V or 1.5 V I/O

应用

文档

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