CY7S1061G30-10BVXIT
现货,推荐
符合RoHS标准
无铅

CY7S1061G30-10BVXIT

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CY7S1061G30-10BVXIT
CY7S1061G30-10BVXIT


商品详情

  • 密度
    16 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    1M x 16
  • 质量等级
    Industrial
  • 速度
    10 ns

OPN
CY7S1061G30-10BVXIT
产品状态 active and preferred
英飞凌封装名称
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TW
晶圆产地
TW
The CY7S1061G30-10BVXIT is a 16-Mbit asynchronous SRAM organized as 1,048,576 × 16, with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over -40°C to +85°C and supports 10 ns access time. PowerSnooze Deep-Sleep mode retains data with IDS ≤ 22 µA, and ISB2 standby is 30 mA max. This ordering is a Pb-free 48-ball VFBGA, tape-and-reel device for industrial systems.

特性

  • 1 M x 16-bit SRAM organization
  • 10 ns address access (tAA)
  • Embedded ECC corrects 1-bit errors
  • ERR pin flags ECC correction event
  • Deep Sleep current 22 µA max
  • Deep Sleep retains data (PowerSnooze)
  • 1.0 V data retention capability
  • Byte writes via BHE/BLE signals
  • Tri-state I/O supports bus sharing
  • Read cycle time tRC = 10 ns
  • Write cycle time tWC = 10 ns
  • VCC stable to 1st access: 100 µs

产品优势

  • 10 ns access cuts memory latency
  • ECC improves data integrity
  • ERR pin enables fast fault debug
  • 22 µA Deep Sleep saves energy
  • Data retention preserves state
  • 1.0 V retention eases backup
  • Byte writes reduce bus bandwidth
  • Tri-state I/O eases bus multiplex
  • 10 ns tRC supports fast reads
  • 10 ns tWC supports fast writes
  • 100 µs startup enables quick boot
  • x16 SRAM fits 16-bit processors

应用

文档

设计资源

开发者社区