新品
现货,推荐
符合RoHS标准
无铅

FS980R08A7F32B

新品
HybridPACK™ Drive G2 with Si/SiC Fusion switch : Compact 750V B6-bridge power module optimized for inverter various power classes

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FS980R08A7F32B
FS980R08A7F32B

商品详情

  • IC max
    980 A
  • VCES (Tvj=25°C typ)
    750 V
  • 冷却概念
    PinFin baseplate
  • 封装
    HybridPACK™ Drive G2
  • 技术
    IGBT EDT3, CoolSiC™ G2
  • 推出年份
    2026
  • 特性
    Short Tabs, PinFin baseplate
  • 电压等级 max
    750 V
  • 目前计划的可用性至少到
    2040
  • 认证标准
    Automotive
  • 配置
    Sixpack
OPN
FS980R08A7F32BHPSA1
产品状态 active and preferred
英飞凌封装名称 AG-HDFSXT-3311
封装名 N/A
包装尺寸 6
包装类型 TRAY
湿度 NA
防潮包装 NON DRY
无铅 Yes
无卤素 No
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称 AG-HDFSXT-3311
封装名 -
包装尺寸 6
包装类型 TRAY
湿度 NA
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The power module combines the latest EDT3 IGBT 750V and second generation CoolSiC™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles.

特性

  • EDT3 IGBT/Diode & CoolSiC Gen2 MOSFET
  • Optimized for simultaneous gate drive
  • Integrated on-chip temperature sensor
  • Low conduction and switching losses
  • Low inductive design
  • Tvj,op = 175°C
  • 4.25kV DC 1s insulation
  • High power density
  • Direct-cooled PinFin base plate
  • PressFIT contact technology
  • High-performance Si3N4 ceramic
  • Guiding elements for PCB & cooler assembly

产品优势

  • Higher temperature cycling capability
  • Integrated on-chip temperature sensor
  • New plastic material
  • Better temperature capability
  • Improved thermal conductivity
  • Lower system BOM
  • Lower AC contact resistance
  • Lower tab temperature
  • PressFIT Contact Technology
  • RoHS compliant
  • Completely Pb free
  • Superior reliability

应用

文档

设计资源

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