IAUCP04P4L020
新品
现货，推荐
符合RoHS标准

IAUCP04P4L020

新品
-40 V, P-Ch, 2.0 mΩ max, Automotive MOSFET, Single SSO8 (5x6), OptiMOS™P2
数据手册
封装

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IAUCP04P4L020
IAUCP04P4L020
数据手册


商品详情

  • 最高 ID (@25°C)
    -264 A
  • 最高 QG (typ @10V)
    263 nC
  • QG (typ @10V)
    202 nC
  • 最高 RDS (on) (@10V)
    2 mΩ
  • 最高 VDS
    -40 V
  • VGS(th) (typ) 范围
    -1.2 V 至 -2.2 V
  • VGS(th) (typ)
    -1.7 V
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™P2
  • 极性
    P
  • 目前计划的可用性至少到
    2038
  • 质量等级
    Automotive

推荐的
OPN
IAUCP04P4L020ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TDSON
封装名 SSO8
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-TDSON
封装名 SSO8
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
The new automotive -40 V OptiMOS™ P2 Single SSO8 MOSFET is available in our SSO8 (5x6 mm²) SMD package. This leadless, clip-soldered P-channel MOSFET is designed for the high performance, quality, and robustness required by demanding and space limited automotive applications. The new P-channel portfolio offers a wide RDS(on) range from 2.0 to 12.5 mΩ, making it well suited for various applications, particularly reverse polarity protection.

特性

  • P-channel MOSFET for automotive use
  • Leadless 5x6 mm2 package with Cu-clip
  • Qualification beyond AEC‑Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • 100% Avalanche tested
  • RoHS compliant
  • Robust design

产品优势

  • Wide RDS(on) range: 2.0 - 12.5 mΩ
  • High current capability up to 175 A
  • Lowest switching and conduction losses
  • Reduced form factor
  • JEDEC standard PG-TDSON-8 package
  • PPAP capable device
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