IMDQ75R040M2H
现货，推荐
符合RoHS标准
无铅

IMDQ75R040M2H

CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 40 mΩ
数据手册
封装
评估板

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IMDQ75R040M2H
IMDQ75R040M2H
数据手册

商品详情

  • 最高 ID (@25°C)
    45 A
  • 最高 RDS (on) (@ Tj = 25°C)
    52 mΩ
  • RDS (on) (@ Tj = 25°C)
    40 mΩ
  • 最高 RthJC
    0.82 K/W
  • 最高 VDS
    750 V
  • 安装
    SMT
  • 封装
    Q-DPAK
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Industrial
推荐的
OPN
IMDQ75R040M2HXTMA1
产品状态 active and preferred
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
封装尺寸 750
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
封装尺寸 750
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.

特性

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available

产品优势

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses
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