现货，推荐
符合RoHS标准
无铅

IMW40R011M2H

CoolSiC™ MOSFET 400 V G2 in TO-247 package, 11 mΩ
数据手册
封装
评估板
每件.
有存货

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IMW40R011M2H
IMW40R011M2H
每件.
数据手册

商品详情

  • ID (@25°C) max
    104 A
  • RDS (on) (@ Tj = 25°C)
    11 mΩ
  • VDS max
    400 V
  • 安装
    THT
  • 封装
    TO247
  • 工作温度
    -55 °C to 175 °C
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Industrial
推荐的
OPN
IMW40R011M2HXKSA1
产品状态 active and preferred
英飞凌封装名称
PG-TO247-3
封装名 TO247
包装尺寸 240
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:
 每件. 有存货

产品状态
Active
英飞凌封装名称
PG-TO247-3
封装名 TO247
包装尺寸 240
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
每件.
有存货
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

特性

  • 440 V blocking voltage
  • Lower FOMs compared to 650 V SiC MOSFETs
  • Fast commutation proof low Qfr body diode
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • Highly controllable
  • Low Voff overshoot during high dV/dt operation
  • .XT interconnection technology

产品优势

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

应用

文档

文档

设计资源

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