现货，推荐
符合RoHS标准

IQE031N08LM6CGSC

OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package with industry leading RDS(on)
数据手册
封装
每件.
有存货

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IQE031N08LM6CGSC
IQE031N08LM6CGSC
每件.
数据手册

商品详情

  • 最高 ID (@25°C)
    127 A
  • 最高 IDpuls
    508 A
  • QG (typ @4.5V)
    26 nC
  • QG (typ @10V)
    54 nC
  • 最高 RDS (on) (@10V)
    3.15 mΩ
  • 最高 RDS (on) (@4.5V)
    4 mΩ
  • 最高 VDS
    80 V
  • VGS(th) 范围
    1.1 V 至 2.3 V
  • VGS(th)
    1.7 V
  • 封装
    PQFN 3.3x3.3 Source-Down
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N
  • 特殊功能
    Logic Level, Center Gate Dual Side Cooling
推荐的
OPN
IQE031N08LM6CGSCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WHTFN-9
封装名 N/A
包装尺寸 6000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:
 每件. 有存货

产品状态
Active
英飞凌封装名称
PG-WHTFN-9
封装名 -
包装尺寸 6000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
每件.
有存货
IQE031N08LM6CGSC is Infineon’s new best-in-class OptiMOS™ 6 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization.

特性

  • Logic level allows lower Qrr and QOSS
  • Center Gate optimized for paralleling
  • Up to 35% lower RDS(on) vs previous Gen
  • New, optimized layout possibilities

产品优势

  • Enables highest power density & performance
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses

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