新品
现货，推荐
符合RoHS标准

IQE036N08NM6CGSC

新品
OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate Dual-Side Cooling
数据手册
封装

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IQE036N08NM6CGSC
IQE036N08NM6CGSC
数据手册

商品详情

  • ID (@25°C) max
    118 A
  • IDpuls max
    472 A
  • QG (typ @10V)
    30 nC
  • RDS (on) (@10V) max
    3.6 mΩ
  • VDS max
    80 V
  • VGS(th)
    3 V
  • 封装
    PQFN 3.3x3.3 Source-Down
  • 工作温度
    -55 °C to 175 °C
  • 极性
    N
  • 特殊功能
    Center Gate Dual Side Cooling
推荐的
OPN
IQE036N08NM6CGSCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WHTFN-9
封装名 N/A
包装尺寸 6000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-WHTFN-9
封装名 -
包装尺寸 6000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

特性

  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

产品优势

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Improved power, SOA & avalanche current
  • Robust reliable performance

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