IRF1405ZS

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

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IRF1405ZS
IRF1405ZS

商品详情

  • ID (@25°C) max
    150 A
  • Ptot max
    230 W
  • Qgd
    46 nC
  • QG (typ @10V)
    120 nC
  • RDS (on) (@10V) max
    4.9 mΩ
  • RthJC max
    0.65 K/W
  • Tj max
    175 °C
  • VDS max
    55 V
  • VGS(th)
    3 V
  • VGS max
    20 V
  • Mounting
    SMD
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • Moisture Sensitivity Level
    1
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
Infineon stock last updated:

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