IRF3711

采用 TO-220AB 封装的 20V 单 N 通道 HEXFET 功率 MOSFET

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IRF3711
IRF3711

商品详情

  • ID (@ TC=100°C) max
    69 A
  • ID max
    69 A
  • ID (@ TC=25°C) max
    110 A
  • Ptot max
    120 W
  • Qgd
    8.9 nC
  • QG
    29 nC
  • RDS (on) max
    6 mΩ
  • RDS (on) (@10V) max
    6 mΩ
  • RDS (on) (@4.5V) max
    8.5 mΩ
  • RthJC max
    1.04 K/W
  • VDS max
    20 V
  • VGS max
    20 V
  • 封装
    TO-220
  • 极性
    N
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
Infineon stock last updated:

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