IRF6721S

采用 DirectFET SQ 封装的 30V 单 N 通道 HEXFET 功率 MOSFET,额定电流为 14 安培,具有低导通电阻

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IRF6721S
IRF6721S

商品详情

  • ID (@25°C) max
    60 A
  • Ptot max
    42 W
  • Ptot (@ TA=25°C) max
    2.2 W
  • Qgd
    3.7 nC
  • QG (typ @4.5V)
    11 nC
  • RDS (on) (@10V) max
    7.3 mΩ
  • RDS (on) (@4.5V) max
    10.9 mΩ
  • RthJC max
    3 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th)
    1.9 V
  • VGS max
    20 V
  • Mounting
    SMD
  • Package
    DirectFET SQ
  • Micro-stencil
    IRF66SQ-25
  • Polarity
    N
  • Moisture Sensitivity Level
    1
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
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