IRLML2502GPBF

采用无卤素 Micro3 封装的 20V 单 N 通道无铅 HEXFET 功率 MOSFET
数据手册

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IRLML2502GPBF
IRLML2502GPBF
数据手册

商品详情

  • ID (@25°C) max
    4.2 A
  • Ptot (@ TA=25°C) max
    1.25 W
  • Qgd
    1.7 nC
  • QG (typ @4.5V)
    8 nC
  • RDS (on) (@4.5V) max
    45 mΩ
  • RthJA max
    100 K/W
  • VDS max
    20 V
  • VGS(th)
    0.9 V
  • VGS max
    12 V
  • Mounting
    SMD
  • Package
    SOT-23
  • Polarity
    N
  • Moisture Sensitivity Level
    1
  • Special Features
    Small Power
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
Infineon stock last updated:

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