IRLML5203GPBF

采用无卤素 Micro3 封装的 -30V 单 P 通道无铅 HEXFET 功率 MOSFET

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IRLML5203GPBF
IRLML5203GPBF

商品详情

  • ID (@25°C) max
    -3 A
  • Ptot (@ TA=25°C) max
    1.25 W
  • Qgd
    1.6 nC
  • QG (typ @10V)
    9.5 nC
  • RDS (on) (@10V) max
    98 mΩ
  • RDS (on) (@4.5V) max
    165 mΩ
  • RthJA max
    100 K/W
  • VDS max
    -30 V
  • VGS(th)
    -1.75 V
  • VGS max
    20 V
  • Package
    SOT-23
  • Polarity
    P
  • Moisture Sensitivity Level
    1
  • Special Features
    Small Power
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
Infineon stock last updated:

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