JANSR2N7598U3CE
现货，推荐

JANSR2N7598U3CE

Rad hard, 600 V, 3.5 A, N-channel MOSFET, R6 in SMD-0.5e Ceramic Lid package - 100 krad(Si) TID, DLA
数据手册
封装

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JANSR2N7598U3CE
JANSR2N7598U3CE
数据手册
  • ESD等级
    Class 2
  • 最高 ID (@25°C)
    3.4 A
  • QG
    52 nC
  • QPL部件号
    2N7598U3CE
  • 最高 RDS (on) (@25°C)
    3.1 Ω
  • SEE
    3 MeV∙cm2/mg
  • 最高 TID
    100 Krad(Si)
  • VBRDSS
    600 V
  • 最高 VF
    1.2 V
  • 可选TID等级 (kRad(si))
    100 300
  • 封装
    SMD-0.5e
  • 极性
    N
  • 生成
    R6
  • 芯片尺寸
    3
  • 认证标准
    DLA
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产品状态
英飞凌封装名称
封装名
封装尺寸
封装类型
湿度
防潮封装
无铅
无卤素
符合RoHS标准
JANSR2N7598U3CE N-channel MOSFET is rad hard, with 600 V and 3.4 A, in a single SMD-0.5e Ceramic Lid package. It is QPL classified and has electrical performance up to 100 krad(Si) TID. IR HiRel R6 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

特性

  • Hermetically sealed
  • Low RDS(on)
  • Single event effect hardened
  • Low total gate charge
  • Simple drive requirements
  • Enhanced ceramic package
  • Light weight
  • ESD rating: Class 2 (MIL-STD-750, 1020)
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