EVAL_GD_BDS_GAN
现货，推荐

EVAL_GD_BDS_GAN

Gate driver evaluation board for CoolGaN™ BDS, intended to be used with daughter cards EVAL_IGK048B041S_GaN, EVAL_IGK080B041S_GaN, EVAL_IGK120B041S.
User manual
评估板

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

EVAL_GD_BDS_GAN
EVAL_GD_BDS_GAN
User manual
  • 最高 Input current
    20 A
  • 产品类别
    CoolGaN™
  • 系列
    CoolGaN™
  • 输入信号电压 范围
    5 V 至 120 V
推荐的
OPN
EVALGDBDSGANTOBO1
产品状态 active and preferred
英飞凌封装名称 L
封装名 N/A
封装尺寸 1
封装类型 CONTAINER
湿度 NA
防潮封装 NON DRY
无铅 No
无卤素 No
符合RoHS标准 No

产品状态
Active
英飞凌封装名称 L
封装名 -
封装尺寸 1
封装类型 CONTAINER
湿度 NA
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
EVAL_GD_BDS_GaN is an evaluation board designed to drive a GaN bidirectional switch (BDS) with drain voltages up to 120 V. It features a single-channel isolated 1EDB7275F gate driver and a connector for attaching different GaN BDS daughter cards. The board lets users choose the gate-drive return path depending on the direction of current flow, making it fit for applications such as e-Fuse, USB‑C PD, smartphones, notebooks, and docking stations.

特性

  • Gate driver for GaN BDS
  • Input voltage range of 5 V to 120 V
  • Max. load current of 20 A
  • Isolated gate driver power supply of 5 V
  • Suited to use with EVAL_IGK120B041S_GaN
  • Suited to use with EVAL_IGK080B041S_GaN
  • Suited to use with EVAL_IGK048B041S_GaN

产品优势

  • Compatible with GaN BDS up to 120 V
  • User-selectable gate drive return path
  • Soft start delay for lower inrush current

应用

Bill of Material

文档

设计资源

合作伙伴解决方案