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CoolSiC™ 1200 V SiC MOSFET

The benefits of wide-bandgap silicon carbide (SiC) semiconductors arise from their higher breakthrough electric field, larger thermal conductivity, higher electron-saturation velocity and lower intrinsic carrier concentration compared to silicon (Si). Based on these SiC material advantages, SiC MOSFETs are becoming an attractive switching transistor for high-power applications, such as solar inverters and off-board electric vehicles (EV) chargers. This application note introduces the CoolSiC™ trench MOSFET, describing the SiC MOSFET’s products, characteristics, gate-oxide reliability and application designs. This application note describes the CoolSiC™ MOSFET’s general features and applications, which can help in designing power systems effectively using the novel transistor.

• 2.30 MB
• 08/10/2024